Books and Reviews
- Van Mieghem, P. and R. P. Mertens, 1994, Heavy Doping Effects in c-Si, chapt. 1 in the book Selected Topics on the Physics and Technology of Advanced Semiconductor Silicon- and Silicon Alloy-based Devices, edited by J. Nijs, Institute of Physics Publishing, Bristol and Philadelphia.
- Van Mieghem, P., 1992, "Theory of Bandtails in Heavily Doped Semiconductors", Rev. Mod. Phys., Vol. 64, No. 3, pp. 755-794.
Journals
- Van Mieghem, P., 1994, "General Drift-Diffusion Theory of the Current in Schottky Diodes", IEEE Trans. Electron. Dev., Vol. 41, No. 12, pp. 2440-2447.
- Van Mieghem, P. , S.C. Jain, J. Nijs and R. Van Overstraeten, 1994, "Stress Relaxation in Laterally Small Strained Semiconductor Epilayers", J. Appl. Phys. 75 (1), pp. 666-668.
- Van Mieghem, P. , 1993, "Origin of the Difference between the Capacitance Intercept Voltage and the Built-in Potential", IEEE Trans. Electron Dev., Vol. 40, No. 12, pp. 2365-2368.
- Van Mieghem, P., S. Decoutere, G. Borghs and R. Mertens, 1992, "Influence of Bandtails on the Performance of Semiconductor Devices", Solide-State Electronics Vol. 35, No. 5, pp. 699-704.
- Deneffe, K., P. Van Mieghem, B. Brijs, W. Van Der Vorst, R. Mertens and G. Borghs, 1991, "As-Deposited Superconducting Thin Films by ECR-Assisted Laser Ablation for Application in Micro-Electronics", Jap. J. Appl. Phys., Vol. 30, No. 9A, pp. 1959-1963.
- Van Mieghem, P., G. Borghs and R. Mertens, 1991, "Generalized Semiclassical Model for the Density of States in Heavily Doped Semiconductors", Phys. Rev. B., 44 (23), pp. 12 822-12 829.
- Dobbelaere, W., J. De Boeck, P. Van Mieghem, R. Mertens and G. Borghs, 1991, "Optical Characterization of Si-doped InAs1-xSbx grown on GaAs and GaAs-coated Si by Molecular Beam Epitaxy" , J. Appl. Phys. 69, 4, pp. 2536-2542.
- Deneffe, K., P. Van Mieghem, B. Brijs, W. Van Der Vorst, R. Mertens and G. Borghs, 1990, "ECR-Plasma Assisted Laser Ablation of As-deposited Superconducting Thin Films for Application in Microelectronics", Journal of the Less-Common Metals, 164 & 165, pp. 307-314.
- Van Mieghem, P., R. P. Mertens, G. Borghs and R.J. Van Overstraeten, 1990, "Band-gap Narrowing in GaAs using a Capacitance Method", Phys. Rev. B., 41 (9), pp. 5952-5959.
- Van Mieghem, P., R. P. Mertens and R.J. Van Overstraeten, 1990, "Theory of the Junction Capacitance of an Abrupt Diode", J. Appl. Phys. 67(9), pp. 4203-4211.
- Borghs, G., K. Bhattacharyya, K. Deneffe, P. Van Mieghem, and R. Mertens, 1989, "Band-gap Narrowing in Highly Doped n- and p-type GaAs studied by Photoluminescence Spectroscopy", J. Appl. Phys. 66 (9), pp. 4381-4386.
Conferences
- De Boeck, J., W. Van Roy, A. Van Esch and G. Borghs; P. Van Mieghem, R. O. Handley and J. del Alamo; M. Tanaka, J. P. Harbison, T. L. Cheeks and T. D. Sands, 1993, "Growth Parameter Dependent Properties and Curie Temperature of Ferromagnetic Epitaxial t -MnAl on GaAs", the Electronic Materials Conference, June 23-25, Santa Barbara.
- Jain, S.C. , J. Poortmans, J. Nijs, P. Van Mieghem, R. Mertens and R. Van Overstraeten, 1992, "Band Offsets in Heavily Doped p-type GeSi/Si (100) Strained Layers: Applications to the Design of Long Wavelength Infrared (LWIR) Detectors", ESSDERC 1992, pp. 439 - 442.
- Jain, S. C., R. P. Mertens, P. Van Mieghem, M. G. Mauk, M. Ghanam, G. Borghs and R. J. Van Overstraeten, 1988, "Effects of Bandgap Narrowing on the Capacitance of Silicon and GaAs pn junctions", Proc. IEEE Bipolar Circuits and Technology Meeting, pp. 195.
- De Moor, B., J. Vandewalle, M. Moonen, L. Vandenberghe and P. Van Mieghem, 1988, "A Geometrical Strategy for the Identification of State Space Models of Linear Multivariable Systems with Singular Value Decomposition", Proc. IFAC Symposium on System Identification, Bejing, pp. 700-704.